PART |
Description |
Maker |
PC895 PC875 PC865 |
From old datasheet system High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
2SC945 |
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V
|
TY Semiconductor Co., L...
|
2SC5212 |
Small Signal Transistor Low collector saturation voltage VCE(sat)=0.2V typ. High collector current ICM=1A.
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
BCP54-10 BCP54BCP56 Q62702-C2120 Q62702-C2148 Q627 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) NPN Silicon AF Transistors (For AF driver and output stages High collector current) NPN硅晶体管自动对焦(为自动驱动器和输出级高集电极电流) NPN Silicon AF Transistors (For AF driver and output stages High collector current) 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Siemens Semiconductor G...
|
CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
2SC2946 |
High Votage VCEO=200V High speed tf us Collector to base voltage VCBO 330 V
|
TY Semiconductor Co., Ltd
|
FZT591A |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|